Plasma Etching Machine

Use O,Ar,Nitrogen,carbon,tetrafluoride with radio frequency radiation to create high activity plasma to eliminate the impurity
Summarize:

1.The principle of the plasma etching machine is utilize the radio frequency radiation to let O,Ar,Nitrogen,carbon tetrafluoride etc. gas to create , high reactivity plasma response with device and become volatile compound, then vacuum system will clear away the volatile compound.
2..The plasma etching machine is applied to etch the silicon phosphor layer of the wafer edge, the surface and the edge of the wafer both spread the phosphor when spreading, it can lead the positive and negative poles of the wafers to short out by edge breakover.So must clear away the speeded the silicon phosphor layer (about 1-3micron) of the wafer edge. The wafers rotate horizontal, the admission gas are carbon tetrafluoride, O and Ar.The principle is under the discharge conditions,the admission gas carbon tetrafluoride,O and Ar response with silicon compound of the wafers’ edge and generate wafers, Will be removed with air-current when the reaction become powder and gas state.

Technical parameters
device Name
Plasma etching machine parameter
Spec
QT-80-PKS
overall dimension
900(L)X1500(W)X1000(H) (mm) appearance does spurt model processing
reaction warehouse dimensions
Stainless steel:W450mmXH400mmXD450mm
Power source
The main system power: three-phase five-wire system 380V 4kW 50Hz.
Plasma rate
13.56MHz
RF power rate
(0~1000)W adjustable
equipment power
≤4kW


Control mode
Adopts including the PLC control of touch screen and man-machine interface, operation Mode includes auto and manual mode. Manages kinds of technological parameter in accordance with recipe under the auto mode, it can save 50 sets different recipes. Only need to callout the corresponding the recipe number when using. Equipment parameter manages level to level, the operator,craft persons,maintenance persons should use different password to manage the different parameter, for improving the equipment safety. Manual mode is used for experiments technological and equipment maintenance.
gas supply system
2 quality flow controls the flow of the working gas.
Wafer dimensions
125X125mm or 156X156mm
Etching medium
Doping wafer,silicon nitride,polysilicon,single crystal silicon
output
2000pcs/hour
Etching rate
100-200nm/min
Equipment working rhythm
≤25min/ every time
Others
Working gas(O,carbon tetrafluoride)stress:≤0.5MPa condense gas stress:≤0.5MPa
Cleared gas stress:0.5MPa