Plasma Etching

1.P/N:QT-80-PKS
2.insize:(W450XH400XD450)mm
3.frequence:13.56MHz
device Name
Plasma etching machine parameter
Spec
QT-80-PKS
overall dimension
900(L)X1500(W)X1000(H) (mm) appearance does spurt model processing
reaction warehouse dimensions
Stainless steel:W450mmXH400mmXD450mm
Power source
The main system power: three-phase five-wire system 380V 4kW 50Hz.
Plasma rate
13.56MHz
RF power rate
(0~1000)W adjustable
equipment power
≤4kW


Control mode
Adopts including the PLC control of touch screen and man-machine interface, operation Mode includes auto and manual mode. Manages kinds of technological parameter in accordance with recipe under the auto mode, it can save 50 sets different recipes. Only need to callout the corresponding the recipe number when using. Equipment parameter manages level to level, the operator,craft persons,maintenance persons should use different password to manage the different parameter, for improving the equipment safety. Manual mode is used for experiments technological and equipment maintenance.
gas supply system
2 quality flow controls the flow of the working gas.
Wafer dimensions
125X125mm or 156X156mm
Etching medium
Doping wafer,silicon nitride,polysilicon,single crystal silicon
output
2000pcs/hour
Etching rate
100-200nm/min
Equipment working rhythm
≤25min/ every time
Others
Working gas(O,carbon tetrafluoride)stress:≤0.5MPa condense gas stress:≤0.5MPa
Cleared gas stress:0.5MPa